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Ordering number : ENA1239
MCH6653
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
MCH6653
Features
* *
General-Purpose Switching Device Applications
1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (900mm 20.8mm) 1unit Conditions Ratings --60 10 --100 --400 0.6 150 --55 to +150 Unit V V mA mA W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS=8V, VDS=0V VDS=-10V, ID=--100A VDS=-10V, ID=--50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-10mA, VGS=-1.5V --0.4 130 220 6.5 7.4 10 8.5 11 20 Ratings min --60 --1 10 --1.4 typ max Unit V A A V mS
Marking : XE
Continued on next page.
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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61108PE TI IM TC-00001408 No. A1239-1/4
MCH6653
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-30V, VGS=--4V, ID=--100mA VDS=-30V, VGS=--4V, ID=--100mA VDS=-30V, VGS=--4V, ID=--100mA IS=--100mA, VGS=0V Ratings min typ 15 3.5 1.0 75 116 665 270 0.58 0.14 0.03 -0.91 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7022A-006
Electrical Connection
6
2.0 0.15
5
4
6
5
4
0 to 0.02
2.1 1.6
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
Top view
0.25
1
0.25
2
3
1
0.65
2
3
0.3
0.85
1
2
3
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
0.07
6
5
4
Switching Time Test Circuit
VIN 0V --4V VIN ID= --50mA RL=600 VOUT VDD= --30V
D
PW=10s D.C.1%
G
Rg
P.G
MCH6653 50
S
Rg=5k
No. A1239-2/4
MCH6653
--100 --90 --80
ID -- VDS
0V
--6 .
--3 .0
--150
ID -- VGS
VDS= --10V
.5 --2
V
Drain Current, ID -- mA
Drain Current, ID -- mA
--4 .
5V
V
--60 --50 --40 --30 --20 --10 0 0 --0.1
--8 .0V --4 .0 V
--70
--1.5 V GS=
V
--100
--50
Ta= 75 25C C
0 --0.5 --1.0
0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.5 --2.0 --2.5 IT11253
Drain-to-Source Voltage, VDS -- V
30
IT11252 20
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
25
Static Drain-to-Source On-State Resistance, RDS(on) --
15
20
--30mA
15
10
--50mA
10
5
5
ID= --10mA
A --10m , I D= .5V = --1 A VGS --30m I= .5V, D = --2 A VGS --50m , I D= -4.0V =VGS
0 0 --2 --4 --6 --8 --10 IT11254
0 --60
--40
--20
0
20
40
--25 C
60 80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
7
Ambient Temperature, Ta -- C
--100 7 5 3
IT11255
yfs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- mS
5 3 2
VDS= --10V
Source Current, IS -- A
2 --10 7 5 3
100 7 5 3 2
= Ta
--2
C 5
C 75
25
C
--1.0 7 5 3 2
10 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
5
--0.1 --0.2
--0.4
25C
2
Ta=7 5C
--0.6
--25C
--0.8
--1.0
--1.2 IT11257
Drain Current, ID -- mA
3 2
IT11256 3 2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD= --30V VGS= --4V
Ciss
Switching Time, SW Time -- ns
1000 7 5
Ciss, Coss, Crss -- pF
td(off)
10 7 5 3 2
tf
3 2
Coss
100 7 5 --0.001 2 3 5
tr
Crss
1.0 7 5
td(on)
7 --0.01 2 3 5
Drain Current, ID -- A
--0.1 IT11258
7
0
--5
--10
--15
--20
--25
--30 IT11259
Drain-to-Source Voltage, VDS -- V
No. A1239-3/4
MCH6653
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IT11260
VGS -- Qg
VDS= --30V ID= --100mA
Drain Current, ID -- A
ASO
7 5 3 2 --0.1 7 5 3 2
IDP= --400mA
Gate-to-Source Voltage, VGS -- V
ID= --100mA
DC
op
PW10s 1m 10 s m s
er
ati
on
10 0 (T ms a= 25 C )
--0.01 7 5 3 2
Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit
2 3 5 7 --1.0 2 3 5 7 --10 2 3
--0.001 --0.1
Total Gate Charge, Qg -- nC
0.7
PD -- Ta
When mounted on ceramic substrate (900mm20.8mm) 1unit
Drain-to-Source Voltage, VDS -- V
5 7 --100 IT13776
Allowable Power Dissipation, PD -- W
0.6
0.5
0.4
0.3
0.2
0.1 0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT13777
Note on usage : Since the MCH6653 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice.
PS No. A1239-4/4

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